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| DC COMPONENTS CO., LTD. R MPSA13 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring extremely high current gain. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating 30 30 10 500 600 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCES BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 hFE1 hFE2 hFE3 fT Cob 380s, Duty Cycle Min 30 30 10 5K 10K 125 2% Typ 1 50K - Max 0.1 0.1 1.5 6 Unit V V V A A V V MHz pF Test Conditions IC=100A, IE=0 IC=0.1mA, VBE=0 IE=10A, IC=0 VCB=30V, IE=0 VEB=10V, IC=0 IC=100mA, IB=0.1mA IC=500mA, IB=0.5mA IC=10mA, VCE=5V IC=100mA, VCE=5V IC=500mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width |
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